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ZHANG Jian-ying, ZHOU Tao, LI Jin-ying. Review of Analysis Methods of Impurity Elements in High Purity Silicon[J]. Journal of Chinese Mass Spectrometry Society, 2016, 37(1): 88-96. DOI: 10.7538/zpxb.2016.37.01.0088
Citation: ZHANG Jian-ying, ZHOU Tao, LI Jin-ying. Review of Analysis Methods of Impurity Elements in High Purity Silicon[J]. Journal of Chinese Mass Spectrometry Society, 2016, 37(1): 88-96. DOI: 10.7538/zpxb.2016.37.01.0088
shu

Review of Analysis Methods of Impurity Elements in High Purity Silicon

  • 1.

    Department of Radiochemistry, China Institute of Atomic Energy, Beijing 102413, China

  • 2.

    National Institute of Metrology, Beijing 100013, China

  • 3.

    China Resources (Holdings) Co., Ltd., Beijing 100005, China

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    • Abstract
  • High purity silicon is widely used in photovoltaic industry and electronic information industry, in which the impurities are an important factor of affecting its performance. According to the different properties of impurities, the MS and non-MS methods of determination of impurity elements in high purity silicon were classified and summarized, and the merits and demerits of these methods as well as their present application were analyzed in this paper. The detection methods of metallic elements mainly include both MS methods such as GDMS, ICP-MS, SIMS etc., and non-MS methods such as AAS, AES, NAA etc. Whereas for non-metallic element, the determination methods are mainly SIMS method and non-MS methods such as CGHE-IR/TC, IR, etc. For high purity silicon purity analysis, MS methods have apparent advantages for the determination of metal impurity elements, whereas for nonmetal impurity elements, non-MS methods show an advantage.
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    • References (56)
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