A High Power RF Solid-State Power Amplifier for ICP

A design and manufacturing method of power amplifier which installed in front of ICP-MS/ICP-AES's ICP light torch was presented．The amplifier board was used the latest RF LDMOS transistor MRFE6VP61K25H as the final step amplifier．A single MRFE6VP61K25H LDMOS transistor supply maximum 1250 W RF power, so this amplifier moudle which peak power can reach 2000 W，can meet the ICP light torch's power requirement(1 600 W)easily through two LDMOS constitute a parallel push-pull class E amplifier．The volume of power amplifier module is reduced to 25% of the design before, and the module cost is only 50% of current similar products. This design provides a good hardware basis for the further development of portable ICP-MS and ICP-AES, etc.