Quantitative Study of Ion Implanted Sample by SIMS

The influence of edse effect and ion enduced atomic mixing effect on SIMS (Secondary Ion Mass Spectrometry) sputtering profile is studied in this paper. Ion enduced atomic mixing effect is an important factor which reduces the SIMS depth resolution when primary ion beam is scaned and the influence of edge effect can be neglected. Through experiment, a relation between quan- titative results depended on implantin dose and sputtering time is found. After analysing the main error sources of quantification, we developed a quantitative method——the Successive Aproximation under Given Accuracy (SAGA method). In this method LSS theoretic project range is used so that quantitative calculation can be proceeded with depth profile. This method is applied successfully to the quantification of N implanted GCr15 steel and Zn implanted GaAs. The quantitative results agree with those by LSS theory calculation and AES analysis, and the deviation is less than 10％. Meanwhile, relative sensitive factor of secondary ion of implanted element can be obtained by this method.