Profile Analysis of Semiconductor Discrete Companent with SIMS

This paper introduces SIMS applications in semiconductor discrete eompanent dissector. By depth analysis of the transistor resource area with SIMS, the depth profiles of surface metal coating and internal doping layer can be obtaind. Six pictures of two transistors are given in this paper. Depending on these profiles, we gain important technology parameters——surface concentration and depth of ion implantation in base area. Finally, some problems about this technique are discussed.