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ZHOU Tao, LU Hai, WANG Jun, REN Tong-xiang. Determination of Trace Impurities in Polysilicon by Glow Discharge Mass Spectrometry[J]. Journal of Chinese Mass Spectrometry Society, 2010, 31(增刊): 93-94.
Citation: ZHOU Tao, LU Hai, WANG Jun, REN Tong-xiang. Determination of Trace Impurities in Polysilicon by Glow Discharge Mass Spectrometry[J]. Journal of Chinese Mass Spectrometry Society, 2010, 31(增刊): 93-94.
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Determination of Trace Impurities in Polysilicon by Glow Discharge Mass Spectrometry

  • National Institute of Metrology, Beijing 100013, China

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  • Received Date: December 31, 1899
  • Revised Date: December 31, 1899
    Graphical Abstract
    • Abstract
  • As a powerful tool for the analysis of high pure metal and semiconductor, glow discharge mass spectrometry (GDMS) was extended applied in China. The primary theory and application of GDMS were introduced, and the advantages and disadvantages were descript through the semi quantitative analysis of the solar cell polysilicon by GDMS. Finally the application of GDMS in high pure materials analysis was prospected.
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    • References (2)
  • [1]
    陈 刚, 葛爱景, 卓尚军, 等. 辉光放电质谱法在无机非金属材料分析中的应用[J]. 分析化学，2004, 32(1): 107-112.
    [2]
    MATSCHAT R, HINRICHS J, KIPPHARDT H. Application of glow discharge mass spectrometry to multielement ultra-trace determination in ultrahigh-purity copper and iron: a calibration approach achieving quantification and traceability[J]. Anal Bioanal Chem, 2006, 386(1): 125-141.
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