离子注入样品的二次离子质谱(SIMS)定量分析
Quantitative Study of Ion Implanted Sample by SIMS
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摘要: 本文分析了弧坑效应和离子轰击混合效应对SIMS深度剖析的影响,认为在采用一次离子束扫描、弧坑效应可忽略的情况下,离子轰击混合效应是影响SIMS深度分辩的重要原因。在分析了注入剂量法的主要误差来源后,结合实验发现了注入剂量法结果随溅射时间的变化规律,由此提出了设定精度、逐点逼近的方法。同时,考虑到溅射深度测量上的困难,采用了LSS理论平均射程值,使得计算更为简捷,并可与SIMS深度剖析同步进行。将该方法用于注N的GCr15轴承钢和注Zn的砷化镓样品取得了较好的结果,与AES和LSS理论分析结果相符,且具有较高的精度。由此方法还可得到稳定的、具有普遍意义的注入元素在基体中的二次离子相对灵敏度因子。Abstract: The influence of edse effect and ion enduced atomic mixing effect on SIMS (Secondary Ion Mass Spectrometry) sputtering profile is studied in this paper. Ion enduced atomic mixing effect is an important factor which reduces the SIMS depth resolution when primary ion beam is scaned and the influence of edge effect can be neglected. Through experiment, a relation between quan- titative results depended on implantin dose and sputtering time is found. After analysing the main error sources of quantification, we developed a quantitative method——the Successive Aproximation under Given Accuracy (SAGA method). In this method LSS theoretic project range is used so that quantitative calculation can be proceeded with depth profile. This method is applied successfully to the quantification of N implanted GCr15 steel and Zn implanted GaAs. The quantitative results agree with those by LSS theory calculation and AES analysis, and the deviation is less than 10%. Meanwhile, relative sensitive factor of secondary ion of implanted element can be obtained by this method.