辉光放电质谱仪测定超纯锗中23种痕量杂质元素

Determination of 23 Elements in Ultra-high Purity Ge by GDMS

  • 摘要: 本文报导了一种用辉光放电质谱仪VG9000在无标准样品的情况下对超纯半导体材料锗中23种痕量杂质元素的直接而快速的定量测定方法。该方法具有10ppt量级的检测极限,是鉴定起统金属或半导体材料纯度(8N)的理想手段。

     

    Abstract: A procedure for determinating 23 elements in ultra-high purity Ge by Glow Dis-charge Mass Spectrometer (GDMS) is reported in this paper. Experiments show thatwith its low detection limit of 10 ppt,GDMS can be used to analyse ultra-trace elementsquantitatively in 7N,even 8N pruity Ge samples.

     

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