Abstract: The production of smaller geometrices and faster switching speeds in integrated circuits as a requirement for VLSI and VI-ISIC development has brought a whole new series of problems to be studied using surface analysis techniques. Scanning Auger electron spectrometry can achieve the required high spatical resolution but should be complemented in the depth analysis mode by the increased sensitivity of secondary ion mass spectrometry (SIMS) for many elements. Since deliberately added impurity elements and contarninants, introduced during materials preparation and processing, are at a concentration in the range 10~(13)to 10~(20)atoms/cm~3, other analysis techniques such as AES, XPS etc. than SIMS can not measure depth distribution of this broad dynamic range of elements. If areas approximately 250×250um~2are available for analysis, B, As and P can be depth-profiled down to 10~(13)—10~(2O)atorns/cm~3 range. Also, the ability, of performing the depth profile slowly allows the near surface of implants and MBE to be accurately portrayed by using Cs~+ and O_2~+ primary ions beam. Above points will be illustrated by the analysis of implantations materials, MBE materials and GaAs integrated circuit.