Abstract: Depth Resolution of SIMSCao Yongming; Ren Yunzhu; Zhang Jinghai;Tao Ying;Zong Xiangfu (Instiute of Materials Science, Fudan Universety, Shanghai 200433, China) Abstract:The depth profile of an abrupt interface and a multi-layer structure by SIMS analysis usually is distorted. The interface is spreaded,so that the depth resoluteon descends. The spread of interface is caused by the mixing effect during the sputtering process and the uneven bottom of the crater. In order to rise the depth resolution of SIMS, it is important to decrease the two kinds of the effects that described above by the possibility. Keywords:depth resolution,sputtering crater,mixing effect,SIMS